PDF) Snapback circuit model for cascoded NMOS ESD over-voltage protection structures
Esd | PDF
Technical considerations and protection mechanism for ESD event...
Snapback behavior determines ESD protection effectiveness - SemiWiki
Snapback and the ideal ESD protection solution (Electrostatic Discharge)
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
Figure 1 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
Technical considerations and protection mechanism for ESD event...
High Trigger Current NPN Transistor With Excellent Double-Snapback Performance for High-Voltage Output ESD Protection | Semantic Scholar
Snapback behavior determines ESD protection effectiveness - SemiWiki
The Transistor: An Indispensable ESD Protection Device - Part 2 - In Compliance Magazine
Figure 1 from A Method to Prevent Strong Snapback in LDNMOS for ESD Protection | Semantic Scholar
Electronics | Free Full-Text | Layout Strengthening the ESD Performance for High-Voltage N-Channel Lateral Diffused MOSFETs
Measured IV-curve and simplified model for ESD-protection elements with... | Download Scientific Diagram
Technical considerations and protection mechanism for ESD event...
An Off-Chip ESD Protection for High-Speed Interfaces - In Compliance Magazine
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
GGNMOS ESD Protection Simulation
An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
Snapback behavior determines ESD protection effectiveness - SemiWiki
A double snapback SCR ESD protection scheme for 28 nm CMOS process - ScienceDirect
Characterization for ESD Design, the TLP Zoo: Part 1 | EOS/ESD Association, Inc.
Mix‐mode forward‐biased diode with low clamping voltage for robust ESD applications - Qi - 2020 - Electronics Letters - Wiley Online Library
